PART |
Description |
Maker |
HL8333G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
SLD131UL |
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
HL7851G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
HL8325G |
GaAlAs Laser Diode From old datasheet system
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管 1557 nm, LASER DIODE 1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon... Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE 798 nm, LASER DIODE High Power Density 1W Laser Diode
|
SONY
|
TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢?3毫米(T.1)包 GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix] Vishay Telefunken
|
LNC702PS |
GaAlAs Semiconductor Laser
|
PANASONIC[Panasonic Semiconductor]
|
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|